Discrete Semiconductor Modules
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IGBT Module; Continuous Collector Current, Ic:50A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:101W; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No; Mounting Type: RoHS Compliant: Yes
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1 + 10 + 25 + 50 + >=100 -
최소 : 1 재고 : 478
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IGBT Modules up to 1200V SixPACK; Package: AG-ECONOPP-1; IC (max): 450.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK™ +;,Discrete Semiconductor Modules 1200V 450A IGBT4
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1 + 10 + 25 + 50 + >=100 -
최소 : 1 재고 : 335
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7MBR25SC120-50
회사: FUJITSU
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개별 반도체 모듈
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1 + 10 + 25 + 50 + >=100 -
최소 : 1 재고 : 15
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Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vcesat:1.55V; Power Dissipation, Pd:51.2W; Collector Emitter Voltage, Vceo:600V
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1 + 10 + 25 + 50 + >=100 -
최소 : 1 재고 : 10
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TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,21A I(C) 37M1509
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1 + 10 + 25 + 50 + >=100 -
재고 : 1



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