제품소개 > 이산 반도체 > 40T03GH
  • 40T03GH
AP

이미지는 참고 용입니다. 제품 사양을 참조하십시오.

40T03GH

Hot Sale

AP40T03GH

회사 : AP
꾸러미 : TO-252
제품 : 이산 반도체
Datasheet: 40T03GH Datasheet (PDF)
RoHs Status: Lead free/RoHS Compliant
재고: 208

  

제품문의하기

도움말: 연락하기 쉬운 다음과 같은 정보를 기입하십시오!


40T03GH 제품 상세 정보

AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25mΩ 28A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200811034 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.032 Max. Units 25 45 3 1 25 +100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=18A VGS=4.5V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V 20 8.8 2.5 5.8 6 62 16 4.4 655 145 95 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS= +25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω,VGS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. – Typ. – Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=28A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THI

AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25mΩ 28A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200811034 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.032 Max. Units 25 45 3 1 25 +100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=18A VGS=4.5V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V 20 8.8 2.5 5.8 6 62 16 4.4 655 145 95 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS= +25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω,VGS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. – Typ. – Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=28A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THI

기술적 인 매개 변수

  • 회사
  • AP
  • 포장
  • Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube
  • RoHs Status
  • Lead free/RoHS Compliant
  • 꾸러미
  • TO-252

40T03GH 특수 제품에 대한 관련

Ratings and Reviews

  • 0 / 5
  • 5 Stars 0%
  • 4 Stars 0%
  • 3 Stars 0%
  • 2 Stars 0%
  • 1 Stars 0%
Reviews
  • Ratings
  • Please rate the product!
지불:
지불
배송:
배송
Estimated Delivery Time: Jul 14 - Jul 19 days (choose Expedited at checkout).

배송 & 지불

배송

  • 전송 모드
  • 선박
  • 배달
  • $20.00-$40.00 (0.50 KG)
  • 2-5 days
  • $20.00-$40.00 (0.50 KG)
  • 3-7 days
  • $20.00-$45.00 (0.50 KG)
  • 2-5 days
  • $25.00-$65.00 (0.50 KG)
  • 2-5 days
  • $25.00-$45.00 (0.50 KG)
  • 5-14 days
  • $2.00-$3.00 (0.10 KG)
  • 7-30 days

Processing Time:Shipping fee depend on different zone and country.


지불

  • 지불 방법
  • 지급 수수료
  • Payment Site
  • charge US$30.00 banking fee.
  • charge 4.0% service fee.
  • https://www.paypal.com/
  • charge 3.5% service fee.
  • charge US$0.00 banking fee.
  • https://www.westernunion.com/
  • charge US$0.00 banking fee.
  • http://global.moneygram.com/

우리는 높은 품질의 제품, 사려 깊은 서비스와 판매 보증 후를 제공

  • 우리는 당신의 다양한 요구를 충족시킬 수, 다양한 제품이있다.

    우리는 당신의 다양한 요구를 충족시킬 수, 다양한 제품이있다.

  • 최소 주문 수량은 1PCS에서 시작됩니다.

    최소 주문 수량은 1PCS에서 시작됩니다.

  • 최저 국제 운송 요금은 $ 2.00 미국에서 시작합니다.

    최저 국제 운송 요금은 $ 2.00 미국에서 시작합니다.

  • 모든 제품에 90 일 품질 보증.

    모든 제품에 90 일 품질 보증.

포장

  • Step1:Product

    Step1: Products

  • Step2:Vacuum packaging

    Step2: Vacuum Packaging

  • Step3:Anti-static bag

    Step3: Anti-Static Bag

  • Step4:Individual packaging

    Step4: Individual Packaging

  • Step5:Packaging boxes

    Step5: Packaging Boxes

  • Step6:bar-code shipping tag

    Step6: Bar-Code Shipping Tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Jotrin ESD packing

보장

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

FAQ:

Q: How does Jotrin guarantee that 40T03GH is the original manufacturer or agent of AP?
We have a professional business development department to strictly test and verify the qualifications of AP original manufacturers and agents. All AP suppliers must pass the qualification review before they can publish their 40T03GH devices; we pay more attention to the channels and quality of 40T03GH products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
Q: How to find the detailed information of 40T03GH chips? Including AP original factory information, application, 40T03GH pictures?
You can use Jotrin's intelligent search engine, or filter by 이산 반도체 category, or find it through AP brand manufacturer page.
Q: Are the AP's 40T03GH price and stock displayed on the platform accurate?
The AP's inventory fluctuates greatly and cannot be updated in time, it will be updated periodically within 24 hours. After submitting an order for 40T03GH, it is recommended to confirm the order with Jotrin salesperson or online customer service before payment.
Q: Can I place an order offline?
Yes. We accept offline orders.
We can provide order placement service. You only need to log in, click "My Orders" to enter the transaction management, and you will see the "Order Details" interface. After checking it, select all and click "Place Order". In addition, you can enjoy coupons or other selected gifts when placing orders online.
Q: What forms of payment can I use in Jotrin?
TT Bank, Paypal, Credit Card, Western Union, and Escrow is all acceptable.
Q: How is the shipping arranged and track my package?
Customers can choose industry-leading freight companies, including DHL, FedEx, UPS, TNT, and Registered Mail.
Once your order has been processed for shipment, our sales will send you an e-mail advising you of the shipping status and tracking number.
Note: It may take up to 24 hours before carriers will display tracking information. In normal conditions, Express delivery needs 3-5 days, Registered Mail needs 25-60 days.
Q: What is the process for returns or replacement of 40T03GH?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 40T03GH we delivered, we will accept the replacement or return of the 40T03GH only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of 40T03GH.
(3)The 40T03GH is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
More details about return electronic components please see our Return & Change Policy.
Q: How to contact us and get support, such as 40T03GH datasheet pdf, 40T03GH pin diagram?
Need any After-Sales service, please feel free contact us: sales@jotrin.com

관련 전자 부품

  • 40N03P
    40N03P 30V, 40A, N-Channel Enhancement-Mode Power MOSFET
  • 40N03GP
    40N03GP N-channel Enhancement-mode Power MOSFET
  • 40P03-20
  • 40MT120UHAPBF
    40MT120UHAPBF Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channe...
  • 40MT160PBPBF
    40MT160PBPBF Diode Rectifier Bridge Single 1.6KV 45A 7-Pin - Tape and Reel
  • 40MT120UH
    40MT120UH HALF-BRIDGE IGBT MTP UltraFast NPT IGBT

국제 인증

국제 인증