AM29LV017D-70EC 제품 상세 정보
The Am29LV017D is a 16 Mbit,3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device isoffered in 48-ball FBGA and 40-pin TSOP packages.
The byte-wide(×8) data appears on DQ7-DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers.
The standard device offers access times of 70,90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable(CE#), write enable(WE#) and output enable(OE#) controls.
The device requires only a single 3.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com-mands are written to the command register using stan-dard microprocessor write timings. Register contents serve as input to an internal state-achine that con-trols the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that auto-matically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facili-tates faster programming times by requiring only two write cycles to program data instead of four.
Device erasure occurs by executing the erase com-mand sequence. This initiates the Embedded Erase algorithm-an internal algorithm that automatically preprograms the array(if it is not already programmed)before executing the erase operation. During erase, thedevice automatically times the erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY#pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectorsto be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low Vcc detector that automatically inhibits write opera-tions during power transitions. The hardware sectorprotection feature disables both program and erase operations in any combination of the sectors of mem-ory. This can be achieved in-system or via program-ming equipment.
The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine toreading array data. The RESET# pin may be tied to the system reset circuitry.A system reset would thus also reset the device, enabling the system microprocessorto read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When ad-dresses have been stable for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
AMD's Flash technology combines years of Flashmemory manufacturing experience to produce the highest levels of quality, reliability and cost effective-ness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tun-neling. The data is programmed using hot electron injec-tion.
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.23 µm process technology
— Compatible with and replaces Am29LV017B device
■ High performance
— Access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— Thirty-two 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing multiple program command sequences
■ Embedded Algorithms
— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
— Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
— 48-ball FBGA
— 40-pin TSOP
■ CFI (Common Flash Interface) compliant
— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
■ Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,or program data to, a sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
■ Command sequence optimized for mass storage
— Specific address not required for unlock cycles
(제품 이미지: Pinout)
(제품 이미지: Diagram)
기술적 인 매개 변수
- Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube
- RoHs Status
- Lead free / RoHS Compliant
AM29LV017D-70EC 특수 제품에 대한 관련
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If there is something wrong with the AM29LV017D70EC we delivered, we will accept the replacement or return of the AM29LV017D-70EC only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of AM29LV017D-70EC.
(3)The AM29LV017D-70EC is unused and only in the original unpacked packaging.
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(1)Inform us within 90 days
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Advanced Micro Devices, Inc
- 1.AMD series CPU naming conventions
- 2.AMD classic processor development history
- 3.The newest AMD Radeon Pro V340 graphics card was introduced
- 4.Samsung is helping AMD get back into the phone GPU market
- 5.AMD's new ray-tracking technology will be benchmarked against the RTX2070
- 6.System-on-Chip targets high-growth, embedded markets.
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