GaN RF Transistor are CW and pulse capable.

Designed for wideband defense and commercial radar, communications and avionics

Richardson RFPD, Inc. announced today the availability and full design support capabilities for two new GaN on SiC RF transistors from Qorvo.

The new discrete GaN on SiC HEMTs operate from DC to 4 GHz. The QPD1009 is a 15 W, 50 V device with an output power level of 17 W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10 W, 50 V QPD1010 features an output power of 11 W at 2 GHz and a linear gain of 24.7 dB at 2 GHz.

The QPD1009 and QPD1010 are Qorvo's newest additions to its growing GaN family of devices that are tailored for wideband defense and commercial radar, communications and avionics applications. The new transistors offer significant operational and system cost savings by achieving greater system-level efficiency and are available in low-cost 3 mm x 3 mm plastic QFN packages.

Additional key features include:

• Typical PAE3dB:

• QPD1009: 72% at 2 GHz
• QPD1010: 70% at 2 GHz

• CW and pulse capable

• Evaluation boards available:

• QPD1009-EB
• QPD1010-EB

About Richardson RFPD Richardson RFPD, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production.

Qorvo positions itself as the leading expert in the next generation of mobile devices, with its ability to create and deliver leading performance and packaging technologies, each of its highly integrated specialized solutions. Qorvo offers flexibility, innovation and precision to customers who need mobility, infrastructure and defense market success.

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